개인정보처리방침

02841
서울시 성북구 안암동 안암5가
고려대학교자연계 캠퍼스
공학관 204호(Prof.), 공학관 241호
(연구실)
대표전화 : 02.3290.3237(Prof.),
3671(연구실)

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SCI Journal

번호 제목 Journal
216 Ultrafast spin current generated by electron–magnon scattering in bulk of ferromagnets Japanese Journal of Applied Physics, Vol. 57, (2018) doi:10.7567/JJAP.57.090307 
215 High-Performance Amorphous Indium Oxide Thin-Film Transistors Fabricated by an Aqueous Solution Process at Low Temperature Japanese Journal of Applied Physics, Vol. 52, pp. 060204, 2013. 05 
214 Effects of Nb2O5 and SiO2 buffer layers on the suppression of potassium out-diffusion into indium tin oxide electrode formed on chemically strengthened glass Japanese Journal of Applied Physics, 53, 08NG01 2014.07 
213 Performance of WCN diffusion barrier for Cu multilevel interconnects Japanese Journal of Applied Physics 57, doi: 10.7567/JJAP.57.04FC01 (2018) 
212 Enhancement of Barrier Properties Using Ultrathin Hybrid Passivation Layer for Organic Light Emitting Diodes Japanese Journal of Applied Physics , vol. 45, pp. 5970 ~ 5973, 2006. 07. 
211 Effective Light Absorptive Layer Using Mezo-Porous Silicon by Electrochemical Etching Japanese Journal of Applied Physics (JJAP), vol. 45, pp. 2875-2880, 2006. 04. 
210 Transmission structural-color characteristics of Al-ZrO2-SiO2 plasmonic linear gratings Japanese Journal of Applied Physics 
209 Optical Heating of Ink-Jet Printable Ag and Ag–Cu Nanoparticles Japanese Jounal of Applied Physics, Vol.46, No.6, pp.5070-5075, 2008.06 
208 Microtunneling sensors for vacuum level evaluation of field emission display devices J.Vacuum Science and Technology, vol. B19, pp. 542-545, 2001. 3/4. 
207 Development of a cold- cathode electron gun for cathode-ray tube(CRT) using Mo-tip field-emitter array(FEA) J.Vac.Sci.Technol.B, vol. 21, pp. 43-47, 2003. 1/2. 
206 Enhancement of emission characteristics for field-emitter arrays by optimizing the etched feature of the gate electrode J.Vac.Sci.Technol.B, vol. 21, pp. 196-192, 2003. 1/2. 
205 Emission stability of a diamond-like carbon coated metal-tip field emitter array J.Vac.Sci.Technol. vol. B17, pp. 486-488, 1999. 3/4. 
204 Thin film phosphor prepared by physical vapor deposition for field emission display application J.Vac.Sci.Technol. vol. B15, pp. 512-515, 1997. 3/4. 
203 Emission characteristic of diamond-tip field emitter arrays fabricated by transfer mold technique J.Vac.Sci.Technol. vol. B15, pp. 499-502, 1997. 3/4. 
202 Anodic bonding technique under low temperature and low voltage using evaporated glass J.Vac.Sci.Technol. vol. B15, pp. 477-481, 1997. 3/4. 
201 Field emission properties of ta-C films with nitrogen doping J.Vac.Sci.Technol. vol. B15, pp. 431-433, 1997. 3/4. 
200 Fabrication and field emission study of gated diamondlike-carbon-coatedsilicon tips J.Vac.Sci.Technol. vol. B15, pp. 425-427, 1997. 3/4. 
199 New plasma display panel packaging technology using electrostatic bonding method J.Vac.Sci.Technol. vol, B19, pp. 1381-1384, 2001. 7/8. 
198 Preparation of N-doped hydrogen-free diamondlike carbon and its application to field emitters J.Vac.Sci.Tech. vol. B17, pp. 241-245, 1999. 1/2. 
197 Effect of N doping on the electron emission properties of diamondlike carbon film on a 2-in. Mo field emitter array panel J.Vac.Sci.Tech. vol. B16, pp. 705-709, 1998. 3/4.